| PART |
Description |
Maker |
| K7R321884M K7R321884M-FC16 K7R321884M-FC20 K7R3218 |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7P323688M |
1Mx36 & 2Mx18 SRAM
|
Samsung Electronics
|
| K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
| K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7 |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
| K7S3236T4C K7S3218T4C |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7N321801M-FC16 K7N321801M-FC20 K7N321801M-QC13 K7 |
1MX36 & 2MX18 PIPELINED NTRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7S3236T4C-FECI33 K7S3218T4C-FECI33 K7S3236T4C-FEC |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
Samsung semiconductor
|
| K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P |
1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100
1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7K3236U2C K7K3218U2C-EC330 K7K3218U2C-FC330 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
DDR SRAM, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
|
Samsung semiconductor
Maxim Integrated Products, Inc.
|
| K7R323682MK7R321882MK7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
|
Samsung Electronic
|
